Energy Efficient Tri-State CNFET Ternary Logic Gates

Author:

Tabrizchi SepherORCID,Sharifi Fazel,Badawy Abdel-Hameed A.

Abstract

Traditional silicon binary circuits continue to face challenges such as high leakage power dissipation and large area of interconnections. Multiple-Valued Logic (MVL) and nano-devices are two feasible solutions to overcome these problems. In this paper, we present a novel method to design ternary logic circuits based on Carbon Nanotube Field Effect Transistors (CNFETs). The proposed designs use the unique properties of CNFETs, e.g., adjusting the Carbon Nanotube (CNT) diameters to have the desired threshold voltage and have the same mobility of P-FET and N-FET transistors. Each of our designed logic circuits implements a logic function and its complementary via a control signal. Also, these circuits have a high impedance state which saves power while the circuits are not in use. We show a more detailed application of our approach by designing a two-digit adder-subtractor circuit. We simulate the proposed ternary circuits using HSPICE via standard 32nm CNFET technology. The simulation results indicate the correct operation of the designs under different process, voltage and temperature (PVT) variations. Moreover, we designed a two-digit adder/subtractor and a power efficient ternary logic ALU based on the proposed gates. Simulation results show that the two-digit adder/subtractor using our proposed gates has 12X and 5X lower power consumption and PDP (power delay product) respectively, compared to previous designs.

Publisher

MDPI AG

Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Efficient Noise Immune Robust Ternary Subtractor Designs*;Proceedings of Second International Conference on Computational Electronics for Wireless Communications;2023

2. Analytical Review of CNTFET-based Standard Ternary Inverter;2022 8th International Conference on Advanced Computing and Communication Systems (ICACCS);2022-03-25

3. Design of ternary logic gates and buffer- based memory cell in nanoelectronics;International Journal of Electronics;2021-11-28

4. Ternary inverter gate designs using OPV5-based single-molecule field-effect transistors;Journal of Computational Electronics;2020-05-16

5. Newly multiplexer-based quaternary half-adder and multiplier using CNTFETs;AEU - International Journal of Electronics and Communications;2020-04

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