A Novel Circuit for Characteristics Measurement of SiC Transistors
Author:
Publisher
The Korean Institute of Electrical Engineers
Subject
Electrical and Electronic Engineering
Link
http://ocean.kisti.re.kr/downfile/crosscheck/kiee/JAKO201424750260359.pdf
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electrical Performances of InN/GaN Tunneling Field-Effect Transistor;Journal of Nanoscience and Nanotechnology;2017-11-01
2. A New Measurement Circuit to Evaluate Current Collapse Effect of GaN HEMTs Under Practical Conditions;IEEE Transactions on Instrumentation and Measurement;2015-07
3. Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope;Journal of Electrical Engineering and Technology;2015-05-01
4. Gate Oxide Reliability Issues of SiC MOSFETs Under Short-Circuit Operation;IEEE Transactions on Power Electronics;2015-05
5. Study on the Parameter Optimization of Soft-switching DC/DC Converters with the Response Surface Methodology, a SPICE Model, and a Genetic Algorithm;Journal of Power Electronics;2015-03-20
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