Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope-Reference-Cited by-同舟云学术

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Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope

Published:2015-05-01 Issue:3 Volume:10 Page:1131-1137
ISSN:1975-0102
Container-title:Journal of Electrical Engineering and Technology
language:en
Short-container-title:Journal of Electrical Engineering and Technology

Author:

Kim Sung Yoon,Seo Jae Hwa,Yoon Young Jun,Kim Jin Su,Cho Seongjae,Lee Jung-Hee,Kang In Man

Publisher

The Korean Institute of Electrical Engineers

Subject

Electrical and Electronic Engineering

Link

http://ocean.kisti.re.kr/downfile/crosscheck/kiee/JAKO201518058234947.pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental Analysis of the Effect of Wear Factors on Guide Vane of Hydraulic Turbine;Machines;2022-04-07

2. Electrical Performances of GaN-based Vertical Trench MOSFETs with Cylindrical and Hexagonal Structure;JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE;2021-12-31

3. Study on high breakdown voltage GaN-based vertical field effect transistor with interfacial charge engineering for power applications;Superlattices and Microstructures;2017-11

4. DC and RF Analysis of Geometrical Parameter Changes in the Current Aperture Vertical Electron Transistor;Journal of Electrical Engineering and Technology;2016-11-01

5. Performance Evaluation of GaN-Based Synchronous Boost Converter under Various Output Voltage, Load Current, and Switching Frequency Operations;Journal of Power Electronics;2015-11-20

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