Study on high breakdown voltage GaN-based vertical field effect transistor with interfacial charge engineering for power applications
Author:
Funder
National Natural Science Foundation of China
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference37 articles.
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1. Vertical GaN Reverse Trench-Gate Power MOSFET and DC-DC Converter;Transactions on Electrical and Electronic Materials;2020-10-13
2. Theoretical investigation of high-voltage superjunction GaN-based vertical hetero-junction field effect transistor with ununiformly doped buffer to suppress charge imbalance effect;Semiconductor Science and Technology;2019-05-21
3. Electronic Devices Based on Group III Nitrides ☆;Reference Module in Materials Science and Materials Engineering;2018
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