Simulation of Hafnium-Based FinFET and Ferroelectricity of Related 2-Dimensional Hafnium-Based Materials

Abstract

The application of MOSFET is constrained because  cannot be successfully scaled down as the power density per unit area in an integrated circuit growing exponentially. Inserting ferroelectric layer can cause Complementary Metal-Oxide-Semiconductor (CMOS) to transit to Negative Capacitance CMOS (NCMOS), which presents steeper Subthreshold Swing (SS) and a higher  ratio. However, typical ferroelectric materials are not compatible with present CMOS production process. In this work, both Hafnium-based FinFET compatible with CMOS and normal Silicon-based FinFET are simulated to compare their electrical properties. The result shows that the drain current of Hafnium-based FinFET is 3.52 times larger than the Silicon-based one when gate voltage is 1.0V. In addition, the on/off current ratio also raises from  to . Other detailed electrical properties of Hafnium-based FinFET are also given out, including electric field distribution and valence band energy. Besides, through ab-initio calculation based on Density Functional Theory (DFT), 2-dimensional Hafnium dioxide which is different from bulk Hafnium dioxide is simulated to show its ferroelectricity.