Spin injection in n-type resonant tunneling diodes-Reference-Cited by-同舟云学术

Spin injection in n-type resonant tunneling diodes

Published:2012-10-25 Issue:1 Volume:7 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Orsi Gordo Vanessa,Herval Leonilson KS,Galeti Helder VA,Gobato Yara Galvão,Brasil Maria JSP,Marques Gilmar E,Henini Mohamed,Airey Robert J

Abstract

Abstract We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X−). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to −88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

https://link.springer.com/content/pdf/10.1186/1556-276X-7-592.pdf

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