Author:
Tan Jia-Hui,Chen Zhi-zhan,Lu Wu-Yue,Cheng Yue,He Hong,Liu Yi-Hong,Sun Yu-Jun,Zhao Gao-Jie
Abstract
Abstract
In this letter, the uniform 4H silicon carbide (SiC) mesopores was fabricated by pulsed electrochemical etching method. The length of the mesopores is about 19 μm with a diameter of about 19 nm. The introduction of pause time (T
off) is crucial to form the uniform 4H-SiC mesopores. The pore diameter will not change if etching goes with T
off. The hole concentration decreasing at the pore tips during the T
off is the main reason for uniformity.
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Cited by
18 articles.
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