Study on Enhancement Mechanisms in Ultrasonic-Assisted Plasma Electrochemical Oxidation for SiC Single Crystal-Reference-Cited by-同舟云学术

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Study on Enhancement Mechanisms in Ultrasonic-Assisted Plasma Electrochemical Oxidation for SiC Single Crystal

Published:2023-10-03 Issue:1 Volume:49 Page:599-611
ISSN:2193-567X
Container-title:Arabian Journal for Science and Engineering
language:en
Short-container-title:Arab J Sci Eng

Author:

Yin Xincheng^ORCID,Wang Youliang,Liu Jianhui,Deng Linfeng,Li Shujuan

Funder

Natural Science Foundation of Gansu Province

Key Lab. of NC Machine Tools and Integrated Manufacturing Equipment of the Education Ministry

National Natural Science Foundation of China

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

https://link.springer.com/content/pdf/10.1007/s13369-023-08299-2.pdf

Reference40 articles.

1. Kimoto, T.; Watanabe, H.: Defect engineering in SiC technology for high-voltage power devices. Appl. Phys. Express 13(12), 120101 (2020). https://doi.org/10.35848/1882-0786/abc787

2. Nguyen, T.K.; Aberoumand, S.; Dao, D.V.: Advances in Si and SiC materials for high-performance supercapacitors toward integrated energy storage systems. Small 17(49), 2101775 (2021). https://doi.org/10.1002/smll.202101775

3. Yuan, X.; Laird, I.; Walder, S.: Opportunities, challenges, and potential solutions in the application of fast-switching SiC power devices and converters. IEEE Trans. Power Electron. 36(4), 3925–3945 (2021). https://doi.org/10.1109/TPEL.2020.3024862

4. Liu, B.; Yang, H.; Xu, Z.; Wang, D.; Ji, H.: Molecular dynamics simulation of nanomachining mechanism between monocrystalline and polycrystalline silicon carbide. Adv. Theory Simul. 4(8), 2100113 (2021). https://doi.org/10.1002/adts.202100113

5. Chen, Z.; Feng, P.; Wang, J.; Feng, F.; Zha, H.: Understanding the abnormal effects of ultrasonic vibration on tool wear and surface generation in Zr-based bulk metallic glass cutting. CIRP J. Manuf. Sci. Technol. 39, 1–17 (2022). https://doi.org/10.1016/j.cirpj.2022.07.004

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