Quantum dot-doped porous silicon metal–semiconductor metal photodetector-Reference-Cited by-同舟云学术

Quantum dot-doped porous silicon metal–semiconductor metal photodetector

Published:2012-06-06 Issue:1 Volume:7 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Chou Chia-Man,Cho Hsing-Tzu,Hsiao Vincent K S,Yong Ken-Tye,Law Wing-Cheung

Abstract

Abstract In this paper, we report on the enhancement of spectral photoresponsivity of porous silicon metal–semiconductor metal (PS-MSM) photodetector embedded with colloidal quantum dots (QDs) inside the pore layer. The detection efficiency of QDs/PS hybrid-MSM photodetector was enhanced by five times larger than that of the undoped PS-MSM photodetector. The bandgap alignment between PS (approximately 1.77 eV) and QDs (approximately 1.91 eV) facilitates the photoinduced electron transfer from QDs to PS whereby enhancing the photoresponsivity. We also showed that the photoresponsitivity of QD/PS hybrid-MSM photodetector depends on the number of layer coatings of QDs and the pore sizes of PS.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

https://link.springer.com/content/pdf/10.1186/1556-276X-7-291.pdf

Reference23 articles.

1. McDonald SA, Konstantatos G, Zhang S, Cyr PW, Klem EJD, Levina L, Sargent EH: Solution-processed PbS quantum dot infrared photodetectors and photovoltaics. Nat Mater 2005, 4: 138–142. 10.1038/nmat1299

2. Konstantatos G, Howard I, Fischer A, Hoogland S, Clifford J, Klem E, Levina L, Sargent EH: Ultrasensitive solution-cast quantum dot photodetectors. Nature 2006, 442: 180–183. 10.1038/nature04855

3. Shieh J-M, Yu W-C, Huang JY, Wang C-K, Dai B-T, Jhan H-Y, Hsu C-W, Kuo H-C, Yang F-L, Pan C-L: Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector. Appl Phys Lett 2009, 94: 241108. 10.1063/1.3156806

4. Tu C-C, Tang L, Huang J, Voutsas A, Lin LY: Solution-processed photodetectors from colloidal silicon nano/micro particle composite. Opt Express 2010, 18: 21622–21627. 10.1364/OE.18.021622

5. Nayfeh OM, Rao S, Smith A, Therrien J, Nayfeh MH: Thin film silicon nanoparticle UV photodetector. IEEE Photo. Tech. Lett. 2004, 16: 1927–1929. 10.1109/LPT.2004.831271

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Highly sensitive photodetector based on laser-generated graphene with 3D heterogeneous multiscale porous structures;Materials & Design;2023-07

2. QDs of Wide Band Gap II–VI Semiconductors Luminescent Properties and Photodetector Applications;Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors;2023

3. 2D CdSe/CdS Core–Shell Nanoplatelets for High-Performance Photodetectors;ACS Applied Nano Materials;2022-08-05

4. Hybrid Nanostructures of 2D CdSe Nanoplatelets for High-Performance Photodetector Using Charge Transfer Process;ACS Applied Nano Materials;2020-04-22

5. Fabrication and investigation of hybrid Perovskite solar cells based on porous silicon;Materials Today: Proceedings;2020