Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector-Reference-Cited by-同舟云学术

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Near-infrared silicon quantum dots metal-oxide-semiconductor field-effect transistor photodetector

Published:2009-06-15 Issue:24 Volume:94 Page:241108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Shieh Jia-Min,Yu Wen-Chien,Huang Jung Y.,Wang Chao-Kei,Dai Bau-Tong,Jhan Huang-Yan,Hsu Chih-Wei,Kuo Hao-Chung,Yang Fu-Liang,Pan Ci-Ling

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3156806

Reference17 articles.

1. Quantum confinement and light emission in SiO2/Si superlattices

2. Enhanced photoresponse of a metal-oxide-semiconductor photodetector with silicon nanocrystals embedded in the oxide layer

3. A high-speed silicon optical modulator based on a metal–oxide–semiconductor capacitor

4. 155-μm and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector

5. SiGe optoelectronic metal-oxide semiconductor field-effect transistor

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