Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers-Reference-Cited by-同舟云学术

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Relationship between structural changes, hydrogen content and annealing in stacks of ultrathin Si/Ge amorphous layers

Published:2011-03-01 Issue:1 Volume:6 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Frigeri Cesare,Serényi Miklós,Khánh Nguyen Quoc,Csik Attila,Riesz Ferenc,Erdélyi Zoltán,Nasi Lucia,Beke Dezső László,Boyen Hans-Gerd

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-6-189.pdf

Reference30 articles.

1. Arrais A, Benzi P, Bettizzo E, Damaria C: Characterization of hydrogenated amorphous germanium compounds obtained by x-ray chemical vapor deposition of germane: Effect of the irradiation dose on optical parameters and structural order. J Appl Phys 2007, 102: 104905. 10.1063/1.2817464

2. Bouizem Y, Belfedal A, Sib JD, Kebab A, Chahed L: Hydrogen-bonding configuration effects on the optoelectronic properties of glow discharge a-Si 1 - x Ge x :H with large x . J Phys Condens Matter 2007, 19: 356215. 10.1088/0953-8984/19/35/356215

3. Jobson KW, Wells J-PR, Schropp REI, Carder DA, Philips PJ, Dijkhuis JI: Relaxation processes of the Ge-H stretch modes in hydrogenated amorphous germanium. Phys Rev B 2006, 73: 155202. 10.1103/PhysRevB.73.155202

4. Cohen JD: Light-induced defects in hydrogenated amorphous silicon germanium alloys. Sol Energy Mater Sol Cells 2003, 78: 399. 10.1016/S0927-0248(02)00445-2

5. Sameshima T, Watanabe H, Kanno H, Sadoh T, Miyao M: Pulsed laser crystallization of silicon-germanium films. Thin Solid Films 2005, 487: 67. 10.1016/j.tsf.2005.01.037

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4. Diffusion and reaction kinetics governing surface blistering in radio frequency sputtered hydrogenated a-SixGe1-x (0 ≤ x ≤ 1) thin films;Thin Solid Films;2019-06

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