Author:
Joung Yeun-Ho,Kang Hyun Il,Kim Jung Hyun,Lee Hae-Seok,Lee Jaehyung,Choi Won Seok
Abstract
Abstract
In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement.
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
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