Optical absorption of dilute nitride alloys using self-consistent Green’s function method
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/1556-276X-9-51.pdf
Reference32 articles.
1. Erol A: Dilute III-V Nitride Semiconductors and Material Systems: Physics and Technology. Heidelberg: Springer; 2008.
2. Seifikar M: Dilute nitride semiconductors : band structure, scattering and high field transport. PhD thesis, University College Cork 2013.
3. Lindsay A, O’Reilly EP: A tight-binding-based analysis of the band anti-crossing model in GaAs 1-x N x . Physica E: Low-dimensional Syst Nanostructures 2004, 21(2–4):901–906.
4. O’Reilly EP, Lindsay A, Fahy S: Theory of the electronic structure of dilute nitride alloys. J Phys: Condens Matter 2004, 16: 3257–3276. 10.1088/0953-8984/16/18/025
5. Skierbiszewski C: Experimental studies of the conduction-band structure of GaInNAs alloys. Semiconductor Sci Technol 2002, 17(8):803. 10.1088/0268-1242/17/8/309
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