Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters-Reference-Cited by-同舟云学术

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Effect of thermal treatment on the growth, structure and luminescence of nitride-passivated silicon nanoclusters

Published:2011-02-23 Issue:1 Volume:6 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Wilson Patrick RJ,Roschuk Tyler,Dunn Kayne,Normand Elise N,Chelomentsev Evgueni,Zalloum Othman HY,Wojcik Jacek,Mascher Peter

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-6-168.pdf

Reference32 articles.

1. Ossicini S, Pavesi L, Priolo F: Light Emitting Silicon for Microphotonics. New York: Springer; 2003.

2. Kovalev D, Heckler H, Ben-Chorin M, Polisski G, Schwartzkopff M, Koch F: Breakdown of the k-Conservation Rule in Si Nanocrystals. Phys Rev Lett 1998, 81: 2803. 10.1103/PhysRevLett.81.2803

3. Kanemitsu Y: Efficient light emission from crystalline and amorphous silicon nanostructures. J Lumin 2002, 100: 209. 10.1016/S0022-2313(02)00425-8

4. Min KS, Shcheglov KV, Yang CM, Atwater HA, Brongersma ML, Polman A: Defect-related versus excitonic visible light emission from ion beam synthesized Si nanocrystals in SiO 2 . Appl Phys Lett 1996, 69: 2033. 10.1063/1.116870

5. Pavesi L, Dal Negro L, Mazzoleni C, Franzo G, Priolo F: Optical gain in silicon nanocrystals. Nature 2000, 408: 440. 10.1038/35044012

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