Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers-Reference-Cited by-同舟云学术

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Preferentially oriented BaTiO3 thin films deposited on silicon with thin intermediate buffer layers

Published:2013-02-07 Issue:1 Volume:8 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

George John P,Beeckman Jeroen,Woestenborghs Wouter,Smet Philippe F,Bogaerts Wim,Neyts Kristiaan

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-8-62.pdf

Reference21 articles.

1. Hongtao X, Pervez NK, York RA: Tunable microwave integrated circuits BST thin film capacitors with device structure optimization. Integr Ferroelectr 2005, 77: 27–3535. 10.1080/10584580500413681

2. Dicken MJ, Sweatlock LA, Pacifici D, Lezec HJ, Bhattacharya K, Atwater HA: Electrooptic modulation in thin film barium titanate plasmonic interferometers. Nano Lett 2008, 8: 4048–4052. 10.1021/nl802981q

3. Bakhoum EG, Cheng MHM: Novel capacitive pressure sensor. J Microelectromechanical Systems 2010, 19: 443–450.

4. Roy BK, Cho J: Dielectric properties of solution-deposited crystalline barium titanate thin films. J Am Ceram Soc 2012, 95: 1189–1192. 10.1111/j.1551-2916.2012.05104.x

5. Xiangyun D, Xiaofen G, Ping C, Chen L, Zhongwen T, Dejun L, Jianbao L, Xiaohui W, Longtu L: Ferroelectric properties study for nanocgrain barium titanate ceramics. Thin Solid Films 2010, 518: e75-e77. 10.1016/j.tsf.2010.03.117

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