Si nanowires by a single-step metal-assisted chemical etching process on lithographically defined areas: formation kinetics

Author:

Nassiopoulou Androula Galiouna,Gianneta Violetta,Katsogridakis Charalambos

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Reference30 articles.

1. Bhushan B: Springer Handbook of Nanotechnology. Berlin Heidelberg: Springer-Verlag; 2004.

2. Nassiopoulou AG: Silicon nanocrystals and nanowires embedded in SiO 2 . In Encyclopedia of Nanoscience and Nanotechnology. Volume 9. Edited by: Nalwa HS. California: American Scientific Publishers; 2004:793–813.

3. Zianni X, Nassiopoulou AG: Optical properties of Si quantum wires and dots. In Handbook of Theoretical and Computational Nanotechnology. Volume 1. Edited by: Rieth M, Schommers W. California: American Scientific Publishers; 2005:1–37.

4. Papadimitriou D, Nassiopoulou AG: Polarized Raman and photoluminescence study on silicon quantum wires. J Appl Phys 1998, 84: 1059–1063. 10.1063/1.368104

5. Heo K, Park JW, Yang JE, Koh J, Kwon J-H, Jhon YM, Kim M, Ho MH, Hong S: Large-scale assembly of highly flexible low-noise devices based on silicon nanowires. Nanotechnology 2010, 21: 145302. 10.1088/0957-4484/21/14/145302

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