Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications-Reference-Cited by-同舟云学术

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Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

Published:2013-02-07 Issue:1 Volume:8 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Salomon Damien,Dussaigne Amelie,Lafossas Matthieu,Durand Christophe,Bougerol Catherine,Ferret Pierre,Eymery Joel

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-8-61.pdf

Reference22 articles.

1. Dong Y, Tian B, Kempa TJ, Lieber CM: Coaxial group III-nitride nanowire photovoltaics. Nano Lett 2009, 9: 2183–2187. 10.1021/nl900858v

2. Qian F, Gradecak S, Li Y, Wen CY, Lieber CM: Core/multishell nanowire heterostructure as multicolour, high-efficiency light-emitting diodes. Nano Lett 2005, 5: 2287–2291. 10.1021/nl051689e

3. Qian F, Li Y, Gradecak S, Park HG, Dong Y, Ding Y, Wang ZL, Lieber CM: Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers. Nat Mater 2008, 7: 701–706. 10.1038/nmat2253

4. Dobrokhotov V, McIlroy DN, Grant Norton M, Abuzir A, Yeh WJ, Stevenson I, Pouy R, Bochenek J, Cartwright M, Wang L, Dawson J, Beaux M, Berven C: Principles and mechanisms of gas sensing by GaN nanowires functionalized with gold nanoparticles. J Appl Phys 2006, 99: 104302. 10.1063/1.2195420

5. Jacopin G, De Luna Bugallo A, Levenus P, Rigutti L, Julien FH, Zagonel LF, Kociak M, Durand C, Salomon D, Chen XJ, Eymery J, Tchernycheva M: Single-wire light-emitting diodes based on GaN wires containing both polar and nonpolar InGaN/GaN quantum wells. Appl Phys Express 2012, 5: 014101. 10.1143/APEX.5.014101

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