Spin effects in InAs self-assembled quantum dots-Reference-Cited by-同舟云学术

Spin effects in InAs self-assembled quantum dots

Published:2011-02-03 Issue:1 Volume:6 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

dos Santos Ednilson C,Gobato Yara Galvão,Brasil Maria JSP,Taylor David A,Henini Mohamed

Abstract

Abstract We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

https://link.springer.com/content/pdf/10.1186/1556-276X-6-115.pdf

Reference11 articles.

1. Slobodskyy A, Gould C, Slobodskyy T, Becker CR, Schmidt G, Molenkamp LW: Voltage-controlled spin selection in a magnetic resonant tunneling diode. Phys Rev Lett 2003, 90: 246601. 10.1103/PhysRevLett.90.246601

2. de Carvalho HB, Galvão Gobato Y, Brasil MJSP, Lopez-Richard V, Marques GE, Camps I, Henini M, Eaves L, Hill G: Voltage-controlled hole spin injection in nonmagnetic GaAs/AlAs resonant tunneling structures. Phys Rev B 2006, 73: 155317. 10.1103/PhysRevB.73.155317

3. de Carvalho HB, Brasil MJSP, Galvão Gobato Y, Marques GE, Galeti VA, Henini M, Hill G: Circular polarization from a nonmagnetic p-i-n resonant tunneling diode. Appl Phys Lett 2007, 90: 62120. 10.1063/1.2472522

4. dos Santos LF, Galvão Gobato Y, Lopez-Richard V, Marques GE, Brasil MJSP, Henini M, Airey RJ: Polarization resolved luminescence in asymmetric n-type GaAs/AlGaAsresonant tunneling diodes. Appl Phys Lett 2008, 92: 143505. 10.1063/1.2908867

5. Loss D, DiVincenzo DP: Quantum computation with quantum dots. Phys Rev A 1998, 57: 120. 10.1103/PhysRevA.57.120

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Spin Polarization of Carriers in InGaAs Self-Assembled Quantum Rings Inserted in GaAs-AlGaAs Resonant Tunneling Devices;Journal of Electronic Materials;2017-03-02

2. Spin polarization of carriers in resonant tunneling devices containing InAs self-assembled quantum dots;Superlattices and Microstructures;2015-12