Electronic properties of core-shell nanowire resonant tunneling diodes
Author:
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/1556-276X-9-509.pdf
Reference10 articles.
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2. Tomioka K, Yoshimura M, Fukui T: A III-V nanowire channel on Si for high performance vertical transistors. Nature 2012, 488: 189. 10.1038/nature11293
3. Zervos M, Feiner L: Electronic structure of piezoelectric double barrier InAs/InP/InAs/InP/InAs (111) resonant tunneling diodes. J Appl Phys 2004, 95: 1. 10.1063/1.1631749
4. Zervos M, Pelekanos N: One-dimensional transfer matrix calculation of current transport in semiconductor nanowires with built-in barriers. J Appl Phys 2008, 104: 054302–1. 10.1063/1.2963691
5. O'Dwyer M, Linke H, Hoffmann E, Humphrey T, Lewis R: 25thInt.Conf. Thermoelectrics 2006, 228.
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