Strain analysis for the prediction of the preferential nucleation sites of stacked quantum dots by combination of FEM and APT

Author:

Hernández-Saz Jesús,Herrera Miriam,Duguay Sébastien,Molina Sergio I

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Reference33 articles.

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3. Lam AW, Ng TY: Electronic confinement in self-assembled quantum dots (SAQD) modeled with a new interfacial capping layer. Comp Mater Sci 2010, 49: S54-S59. 10.1016/j.commatsci.2010.01.043

4. Marti A, Cuadra L, Luque A: Quantum dot intermediate band solar cell. In Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference – 2000: September 15–22, 2000. Anchorage, Alaska, New York: IEEE; 2000:940–943.

5. You MH, Li ZG, Gao X, Qiao ZL, Wang Y, Liu GJ, Li L, Li M: Long wavelength strain-engineered InAs five stacks quantum dots laser diode growth by molecular beam epitaxy. Optik 2013, 124: 1849–1851. 10.1016/j.ijleo.2012.05.041

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