Author:
Chen Zi-Bin,Lei Wen,Chen Bin,Wang Yan-Bo,Liao Xiao-Zhou,Tan Hoe H,Zou Jin,Ringer Simon P,Jagadish Chennupati
Abstract
Abstract
InAs/GaAs(001) quantum dots grown by droplet epitaxy were investigated using electron microscopy. Misfit dislocations in relaxed InAs/GaAs(001) islands were found to be located approximately 2 nm above the crystalline sample surface, which provides an impression that the misfit dislocations did not form at the island/substrate interface. However, detailed microscopy data analysis indicates that the observation is in fact an artefact caused by the surface oxidation of the material that resulted in substrate surface moving down about 2 nm. As such, caution is needed in explaining the observed interfacial structure.
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Reference29 articles.
1. Amlani I, Orlov AO, Toth G, Bernstein GH, Lent CS, Snider GL: Digital logic gate using quantum-dot cellular automata. Science 1999, 284: 289–291. 10.1126/science.284.5412.289
2. Salter CL, Stevenson RM, Farrer I, Nicoll CA, Ritchie DA, Shields AJ: An entangled-light-emitting diode. Nature 2010, 465: 594–597. 10.1038/nature09078
3. Imamoglu A, Awschalom DD, Burkard G, DiVincenzo DP, Loss D, Sherwin M, Small A: Quantum information processing using electron spins and cavity-QED. Phys Rev Lett 1999, 83: 4204–4207. 10.1103/PhysRevLett.83.4204
4. Burkard G, Loss D, DiVincenzo DP: Coupled quantum dots as quantum gates. Phys Rev B 1999, 59: 2070–2078. 10.1103/PhysRevB.59.2070
5. Stranski IN, Krastanow L: Zur Theorie der orientierten Ausscheidung von lonenkristallen aufeinander, Sitzungsberichte d. Akad. d. Wissenschaften in Wien. Math Nat KI IIb 1937, 146: 797–810.
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