The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots-Reference-Cited by-同舟云学术

The Formation Site of Noninterfacial Misfit Dislocations in InAs/GaAs Quantum Dots

Published:2014 Issue: Volume:2014 Page:1-5
ISSN:1687-4110
Container-title:Journal of Nanomaterials
language:en
Short-container-title:Journal of Nanomaterials

Author:

Zhou Shuai¹,Liu Yumin¹,Lu Pengfei¹,Han Lihong¹,Yu Zhongyuan¹

Affiliation:

1. State Key Laboratory of Information Photonics and Optical Communications, Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, P.O. Box 49 (Room 339), Beijing 100876, China

Abstract

Taking elastic anisotropy into consideration, we use a dislocation position dependent model to calculate the preferential formation site of noninterfacial 60° mixed dislocation segment in ellipsoid shaped InAs/GaAs quantum dots (QDs) which is observed in the experiment. From the result, it is clear that the positions near the right edge of the quantum dot are the energy favorable areas for the noninterfacial 60° mixed dislocations.

Publisher

Hindawi Limited

Subject

General Materials Science

Link

http://downloads.hindawi.com/journals/jnm/2014/103640.pdf

Reference22 articles.

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5. THE STRAIN DISTRIBUTIONS AND CARRIER'S CONFINING POTENTIALS OF SELF-ORGANIZED InAs/GaAs QUANTUM DOT

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