Author:
Jin Lu,Li Dongsheng,Xiang Luelue,Wang Feng,Yang Deren,Que Duanlin
Abstract
Abstract
The energy transfer mechanism between luminescent centers (LCs) and Er3+ in erbium-doped silicon-rich oxide (SROEr) films prepared by electron beam evaporation is investigated. Intense photoluminescence of the LCs (weak oxygen bonds, neutral oxygen vacancies, and Si=O states) within the active matrixes is obtained. Fast energy transfer from Si=O states to Er3+ takes advantage in the SROEr film and enhances the light emission from Er3+. The introduction of Si nanoclusters, which induces the Si=O states and facilitates the photon absorption of the Si=O states, is essential to obtain intense photoluminescence from both Si=O states and Er3+.
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
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