Grain size dependence of dielectric relaxation in cerium oxide as high-k layer-Reference-Cited by-同舟云学术

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Grain size dependence of dielectric relaxation in cerium oxide as high-k layer

Published:2013-04-15 Issue:1 Volume:8 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Zhao Chun,Zhao Ce Zhou,Werner Matthew,Taylor Steve,Chalker Paul,King Peter

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-8-172.pdf

Reference25 articles.

1. Aspinall HC, Bacsa J, Jones AC, Wrench JS, Black K, Chalker PR, King PJ, Marshall P, Werner M, Davies HO, Odedra R: Ce(IV) complexes with donor-functionalized alkoxide ligands: improved precursors for chemical vapor deposition of CeO2. Inorg Chem 2011, 50: 11644–11652. 10.1021/ic201593s

2. Phokha S, Pinitsoontorn S, Chirawatkul P, Poo-arporn Y, Maensiri S: Synthesis, characterization, and magnetic properties of monodisperse CeO2 nanospheres prepared by PVP-assisted hydrothermal method. Nanoscale Res Lett 2012, 7: 425. 10.1186/1556-276X-7-425

3. Fukuda H, Miura M, Sakuma S, Nomura S: Structural and electrical properties of crystalline CeO2 films formed by metaorganic decomposition. Jpn J Appl Phys 1998, 37: 4158–4159. 10.1143/JJAP.37.4158

4. Santha NI, Sebastian MT, Mohanan P, Alford NM, Sarma K, Pullar RC, Kamba S, Pashkin A, Samukhina P, Petzelt J: Effect of doping on the dielectric properties of cerium oxide in the microwave and far-infrared frequency range. J Am Ceram Soc 2004, 87: 1233–1237. 10.1111/j.1151-2916.2004.tb07717_33.x

5. Nishikawa Y, Fukushima N, Yasuda N, Nakayama K, Ikegawa S: Electrical properties of single crystalline CeO2 high-k gate dielectrics directly grown on Si (111). Jpn J Appl Phys 2002, 41: 2480–2483. 10.1143/JJAP.41.2480

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