Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz-Reference-Cited by-同舟云学术

Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz

Published:2014-08-21 Issue:1 Volume:9 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Sarafis Panagiotis,Nassiopoulou Androula Galiouna

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-9-418.pdf

Reference30 articles.

1. Kim H-S, Xie Y-H, DeVincentis M, Itoh T, Jenkins K a: Unoxidized porous Si as an isolation material for mixed-signal integrated circuit applications. J Appl Phys 2003, 93: 4226. 10.1063/1.1555700

2. Welty R, Park S, Asbeck PM, Dancil K-PS, Sailor MJ: Porous silicon technology for RF integrated circuit applications. In 1998 Top. Meet. Silicon Monolith. Integr. Circuits RF Syst. Dig. Pap. (Cat. No.98EX271). IEEE; 1998:160–163.

3. Gautier G, Leduc P: Porous silicon for electrical isolation in radio frequency devices: a review. Appl Phys Rev 2014, 1: 011101. 10.1063/1.4833575

4. Capelle M, Billoué J, Poveda P, Gautier G: RF performances of inductors integrated on localized p + -type porous silicon regions. Nanoscale Res Lett 2012, 7: 523. 10.1186/1556-276X-7-523

5. Issa H, Ferrari P, Hourdakis E, Nassiopoulou AG: On-chip high-performance millimeter-wave transmission lines on locally grown porous silicon areas. IEEE Trans Electron Devices 2011, 58: 3720–3724.

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