GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation-Reference-Cited by-同舟云学术

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GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation

Published:2011-01-27 Issue:1 Volume:6 Page:
ISSN:1556-276X
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Chaqmaqchee Faten Adel Ismail,Mazzucato Simone,Oduncuoglu Murat,Balkan Naci,Sun Yun,Gunes Mustafa,Hugues Maxime,Hopkinson Mark

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/1556-276X-6-104.pdf

Reference18 articles.

1. Kondow M, Uomi K, Niwa A, Kitatani T, Watahiki S, Yazawa Y: GaInNAs: A novel material for long-wavelength-range laser diodes with excellent high-temperature performance. Jpn J Appl Phys 1996, 35: 1273. 10.1143/JJAP.35.1273

2. Buyanova IA, Chen WM, Monemar B: Electronic properties of Ga(In)NAs alloys. MRS Internet J Nitride Semicond Res 2001, 6: 2.

3. Piprek J, Bjorlin ES, Bowers JE: Optical gain-bandwidth product of vertical-cavity laser amplifiers. Electron Lett 2001, 37: 298. 10.1049/el:20010201

4. Karim A, Bjorlin S, Piprek J, Bowers JE: Long-wavelength vertical-cavity lasers and amplifiers. IEEE J Sel Top Quantum Electron 2000, 6: 1244. 10.1109/2944.902174

5. Bjorlin S, Riou B, Keating A, Abraham P, Chiu Yi-J, Piprek J, Bowers JE: 1.3-μm vertical-cavity amplifier. IEEE Photonics Technol Lett 2000, 12: 951. 10.1109/68.867971

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