Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material-Reference-Cited by-同舟云学术

Electron beam irradiation induced crystallization behavior of amorphous Ge2Sb2Te5 chalcogenide material

Published:2019-12 Issue:1 Volume:49 Page:
ISSN:2287-4445
Container-title:Applied Microscopy
language:en
Short-container-title:Appl. Microsc.

Author:

An Byeong-Seon^ORCID

Abstract

AbstractThe crystallization of amorphous Ge2Sb2Te5 phase change material induced by electron beam irradiation was investigated by in-situ transmission electron microscopy (TEM). Amorphous matrix transformed into a partially crystalline state after being irradiated with a 200-keV electron beam for a long time. Real-time observation revealed that the crystallization of amorphous Ge2Sb2Te5 film occurs through a nucleation and growth mechanism under electron beam irradiation in TEM. While uncertainty from the 2D projection remains, the nuclei have been observed to grow preferentially along the < 100> direction.

Funder

Ministry of Trade, Industry and Energy

Samsung

Publisher

Springer Science and Business Media LLC

Link

http://link.springer.com/content/pdf/10.1186/s42649-019-0021-5.pdf

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