Thin films with high surface roughness: thickness and dielectric function analysis using spectroscopic ellipsometry
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://link.springer.com/content/pdf/10.1186/2193-1801-3-82.pdf
Reference10 articles.
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2. Bruggeman DAG: Berechnung verschiedener physikalischer Konstanten von heterogenen Substanzen. I. Dielektrizitätskonstanten und Leitfähigkeiten der Mischkörper aus isotropen Substanzen. Ann Phys 1935, 416: 636-679. doi:10.1002/andp.19354160705 10.1002/andp.19354160705
3. Dhananjay , Cheng S-S, Yang C-Y, Ou C-W, Chuang Y-C, Wu MC, Chu C-W: Dependence of channel thickness on the performance of In2O3 thin film transistors. J Phys D Appl Phys 2008, 41: 092006. doi:10.1088/0022-3727/41/9/092006 10.1088/0022-3727/41/9/092006
4. Franta D, Ohlídal I: Comparison of effective medium approximation and Rayleigh-Rice theory concerning ellipsometric characterization of rough surfaces. Opt Commun 2005, 248: 459. doi:10.1016/j.optcom.2004.12.016 10.1016/j.optcom.2004.12.016
5. Gordan OD, Sakurai T, Friedrich M, Akimoto K, Zahn DRT: Ellipsometric study of an organic template effect: H2Pc/PTCDA. Org Electron 2006, 7: 521-527. doi:10.1016/j.orgel.2006.07.008 10.1016/j.orgel.2006.07.008
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