Dependence of Electronic and Optical Properties of MoS2 Multilayers on the Interlayer Coupling and Van Hove Singularity
Author:
Funder
National Key R&D Program of China
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/s11671-019-3105-9.pdf
Reference51 articles.
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3. Ye L, Wu CZ, Guo W, Xie Y (2006) MoS2 hierarchical hollow cubic cages assembled by bilayers: one-step synthesis and their electrochemical hydrogen storage properties. Chem Commun 45:4738–4740
4. Mak KF, Lee C, Hone J, Shan J, Heinz TF (2010) Atomically thin MoS2: a new direct-gap semiconductor. Phys Rev Lett 105:136805
5. Kuc A, Zibouche N, Heine T (2011) Influence of quantum confinement on the electronic structure of the transition metal sulfide TS2. Phys Rev B 83:245213
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