High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study-Reference-Cited by-同舟云学术

High-Performance Two-Dimensional InSe Field-Effect Transistors with Novel Sandwiched Ohmic Contact for Sub-10 nm Nodes: a Theoretical Study

Published:2019-08-15 Issue:1 Volume:14 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Zhu Jiaduo^ORCID,Ning Jing,Wang Dong,Zhang Jincheng,Guo Lixin,Hao Yue

Funder

111 project

National Natural Science Foundation of China

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-019-3106-8.pdf

Reference44 articles.

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3. Liu F, Wang YJ, Liu XY, Wang J, Guo H (2015) A theoretical investigation of orientation-dependent transport in monolayer MoS2 transistors at the ballistic limit. IEEE Electron Device Lett 36:10

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5. Radisavljevic B, Radenovic A, Brivio J, Giacometti V, Kis A (2011) Single-layer MoS2 transistors. Nat Nanotechnol 6:3

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