A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode
Author:
Funder
Natural Science Foundation
Assembly Pre-research Project
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/s11671-019-2860-y.pdf
Reference24 articles.
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3. Park PS, Nath DN, Krishnamoorthy S, Rajan S (2012) Electron gas dimensionality engineering in AlGaN/GaN high electron mobility transistors using polarization. Appl Phys Lett 100:063507
4. Pengelly RS, Wood SM, Milligan JW, Sheppard ST, Pribble WL (2012) A review of GaN on SiC high electron-mobility power transistors and MMICs. IEEE Trans Microw Theory Tech 60:1764–1783
5. Chow TP, Tyagi R (1994) Wide bandgap compound semiconductors for superior high-voltage unipolar power devices. IEEE Trans Electron Dev 41(8):1481–1483
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