Structure Investigations of Islands with Atomic-Scale Boron–Carbon Bilayers in Heavily Boron-Doped Diamond Single Crystal: Origin of Stepwise Tensile Stress
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Published:2021-02-08
Issue:1
Volume:16
Page:
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ISSN:1556-276X
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Container-title:Nanoscale Research Letters
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language:en
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Short-container-title:Nanoscale Res Lett
Author:
Polyakov S. N.ORCID, Denisov V. N., Denisov V. V., Zholudev S. I., Lomov A. A., Moskalenko V. A., Molchanov S. P., Martyushov S. Yu., Terentiev S. A., Blank V. D.
Abstract
AbstractThe detailed studies of the surface structure of synthetic boron-doped diamond single crystals using both conventional X-ray and synchrotron nano- and microbeam diffraction, as well as atomic force microscopy and micro-Raman spectroscopy, were carried out to clarify the recently discovered features in them. The arbitrary shaped islands towering above the (111) diamond surface are formed at the final stage of the crystal growth. Their lateral dimensions are from several to tens of microns and their height is from 0.5 to 3 μm. The highly nonequilibrium conditions of crystal growth enhance the boron solubility and, therefore, lead to an increase of the boron concentrations in the islands on the surface up to 1022 cm−3, eventually generating significant stresses in them. The stress in the islands is found to be the volumetric tensile stress. This conclusion is based on the stepwise shift of the diamond Raman peak toward lower frequencies from 1328 to 1300 cm−1 in various islands and on the observation of the shift of three low-intensity reflections at 2-theta Bragg angles of 41.468°, 41.940° and 42.413° in the X-ray diffractogram to the left relative to the (111) diamond reflection at 2theta = 43.93°. We believe that the origin of the stepwise tensile stress is a discrete change in the distances between boron–carbon layers with the step of 6.18 Å. This supposition explains also the stepwise (step of 5 cm−1) behavior of the diamond Raman peak shift. Two approaches based on the combined application of Raman scattering and X-ray diffraction data allowed determination of the values of stresses both in lateral and normal directions. The maximum tensile stress in the direction normal to the surface reaches 63.6 GPa, close to the fracture limit of diamond, equal to 90 GPa along the [111] crystallographic direction. The presented experimental results unambiguously confirm our previously proposed structural model of the boron-doped diamond containing two-dimensional boron–carbon nanosheets and bilayers.
Funder
Российский Фонд Фундаментальных Исследований
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Reference29 articles.
1. Tsao JY, Chowdhury S, Hollis MA, Jena D, Johnson NM, Jones KA, Kaplar RJ, Rajan S, Van de Walle SG, Bellotti E, Chua CL, Collazo R, Coltrin ME, Cooper JA, Evans KR, Graham S, Grotjohn TA, Heller ER, Higashiwaki M, Islam MS, Juodawlkis PW, Khan MA, Koehler AD, Leach JH, Mishra UK, Nemanich RJ, Pilawa-Podgurski RCN, Shealy JB, Sitar Z, Tadjer MJ, Witulski AF, Wraback M, Simmons JA (2018) Ultrawide-bandgap semiconductors: research opportunities and challenges. Adv Electron Mater 4:1600501. https://doi.org/10.1002/aelm.201600501 2. Blank VD, Kuznetsov MS, Nosukhin SA, Terentiev SA, Denisov VN (2007) The influence of crystallization temperature and boron concentration in growth environment on its distribution in growth sectors of type IIb diamond. Diamond Relat Mater 16:800. https://doi.org/10.1016/j.diamond.2006.12.010 3. Burns RC, Chumakov AI, Connell SH, Dube D, Godfried HP, Hansen JO, Härtwig J, Hoszowska J, Masiello F, Mkhonza L, Rebak M, Rommevaux A, Setshedi R, Van Vaerenbergh P (2009) HPHT growth and x-ray characterization of high-quality type IIa diamond. J Phys Condens Matter 21:364224. https://doi.org/10.1088/0953-8984/21/36/364224 4. Banholzer WF, Anthony TR (1992) Isotope enrichment during diamond growth. Diamond Relat Mater 1:1157. https://doi.org/10.1016/0925-9635(92)90089-7 5. Polyakov SN, Denisov VN, Mavrin BN, Kirichenko AN, Kuznetsov MS, Martyushov SYu, Terentiev SA, Blank VD (2016) Formation of boron-carbon nanosheets and bilayers in boron-doped diamond: origin of metallicity and superconductivity. Nanoscale Res Lett 11:11. https://doi.org/10.1186/s11671-015-1215-6
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