Author:
Yang Hang,Chen Wei,Zheng Xiaoming,Yang Dongsheng,Hu Yuze,Zhang Xiangzhe,Ye Xin,Zhang Yi,Jiang Tian,Peng Gang,Zhang Xueao,Zhang Renyan,Deng Chuyun,Qin Shiqiao
Abstract
AbstractThe near-infrared (NIR) photoelectric properties of multilayer Bi2O2Se nanofilms were systematically studied in this paper. Multilayer Bi2O2Se nanofilms demonstrate a sensitive photo response to NIR, including a high photoresponsivity (~ 101 A/W), a quick response time (~ 30 ms), a high external quantum efficiency (~ 20,300%), and a high detection rate (1.9 × 1010 Jones). These results show that the device based on multilayer Bi2O2Se nanofilms might have great potentials for future applications in ultrafast, highly sensitive NIR optoelectronic devices.
Funder
National Natural Science Foundation of China
Scientific Researches Foundation of National University of Defense Technology
NSF of Hunan province
Open Director Fund of State Key Laboratory of Pulsed Power Laser Technology
Open Research Fund of Hunan Provincial Key Laboratory of High Energy Technology
Opening Foundation of State Key Laboratory of Laser Interaction with Matter
Youth talent lifting project
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Cited by
37 articles.
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