Direct growth Bi2O2Se nanosheets on SiO2/Si substrate for high-performance and broadband photodetector

Abstract

Abstract Bi2O2Se, a newly emerging two-dimensional (2D) material, has attracted significant attention as a promising candidate for optoelectronics applications due to its exceptional air stability and high mobility. Generally, mica and SrTiO3 substrates with lattice matching are commonly used for the growth of high-quality 2D Bi2O2Se. Although 2D Bi2O2Se grown on these insulating substrates can be transferred onto Si substrate to ensure compatibility with silicon-based semiconductor processes, this inevitably introduces defects and surface states that significantly compromise the performance of optoelectronic devices. Herein we employ Bi2Se3 as the evaporation source and oxygen reaction to directly grow Bi2O2Se nanosheets on Si substrate through a conventional chemical vapor deposition method. The photodetector based on the Bi2O2Se nanosheets on Si substrate demonstrates outstanding optoelectronics performance with a responsivity of 379 A W−1, detectivity of 2.9 × 1010 Jones, and rapid response time of 0.28 ms, respectively, with 532 nm illumination. Moreover, it also exhibits a broadband photodetection capability across the visible to near-infrared range (532–1300 nm). These results suggest that the promising potential of Bi2O2Se nanosheets for high-performance and broadband photodetector applications.