Coexistence of Anisotropic Large Magnetoresistance and Ferroelectricity in Two-Dimensional Narrow-Bandgap Bi<sub>2</sub>O<sub>2</sub>Te-Reference-Cited by-同舟云学术

Coexistence of Anisotropic Large Magnetoresistance and Ferroelectricity in Two-Dimensional Narrow-Bandgap Bi₂O₂Te

Published:2022-11-09 Issue:11 Volume:16 Page:19543-19550
ISSN:1936-0851
Container-title:ACS Nano
language:en
Short-container-title:ACS Nano

Author:

Zou Xiaobin¹,Tian Fei¹,Liang Haikuan¹,Li Yan¹^ORCID,Sun Yong¹^ORCID,Wang Chengxin¹^ORCID

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen (Zhongshan) University, Guangzhou 510275, People’s Republic of China

Funder

National Natural Science Foundation of China

Key Research Program of Guangdong Province

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsnano.2c09997

Reference28 articles.

1. Emerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics

2. Progress Report on Property, Preparation, and Application of Bi 2 O 2 Se

3. High electron mobility and quantum oscillations in non-encapsulated ultrathin semiconducting Bi2O2Se

4. A native oxide high-κ gate dielectric for two-dimensional electronics

5. Uniform High-k Amorphous Native Oxide Synthesized by Oxygen Plasma for Top-Gated Transistors

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