Author:
Chao Yi-Jie,Yang Kai-Wei,Su Chi,Lin Chrong-Jung,King Ya-Chin
Abstract
AbstractThis work proposed a modified plasma induced charging (PID) detector to widen the detection range, for monitoring the possible plasma damage across a wafer during advanced CMOS BEOL processes. New antenna designs for plasma induced damage patterns with extended capacitors are investigated. By adapting the novel PID detectors, the maximum charging levels of the detectors have been enhanced.
Funder
Taiwan Semiconductor Manufacturing Company
Ministry of Science and Technology, Taiwan
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
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