AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition-Reference-Cited by-同舟云学术

AlN Surface Passivation of GaN-Based High Electron Mobility Transistors by Plasma-Enhanced Atomic Layer Deposition

Published:2017-04-27 Issue:1 Volume:12 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Tzou An-Jye,Chu Kuo-Hsiung,Lin I-Feng,Østreng Erik,Fang Yung-Sheng,Wu Xiao-Peng,Wu Bo-Wei,Shen Chang-Hong,Shieh Jia-Ming,Yeh Wen-Kuan,Chang Chun-Yen,Kuo Hao-Chung

Funder

Ministry of Science and Technology, Taiwan

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-017-2082-0.pdf

Reference19 articles.

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2. Chow TP, Tyagi R (1994) Wide bandgap compound semiconductors for superior high-voltage unipolar power devices. IEEE Trans Electron Dev 41(8):1481–1483

3. Liao WC, Chen YL, Chen ZX, Chyi JI, Hsin YM (2014) Gate leakage current induced trapping in AlGaN/GaN Schottky-gate HFETs and MISHFETs. Nanoscale Res Lett 9(1):474

4. Kim H, Thompson RM, Tilak V, Prunty TR, Shealy JR, Eastman LF (2003) Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation. IEEE Electron Dev Lett 24(7):421–423

5. Xu D, Chu K, Diaz J, Zhu W, Roy R, Pleasant LM, Nichols K, Chao PC, Xu M, Ye PD (2013) 0.2-μm AlGaN/GaN high electron-mobility transistors with atomic layer deposition Al2O3 passivation. IEEE Electron Dev Lett 34(6):744–746

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