Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

Author:

Su Xiang-Bin,Ding Ying,Ma Ben,Zhang Ke-Lu,Chen Ze-Sheng,Li Jing-Lun,Cui Xiao-Ran,Xu Ying-Qiang,Ni Hai-Qiao,Niu Zhi-Chuan

Funder

National Natural Science Foundation of China

National 973 program

Open Fund of High Power Laser Lab, China Academy of Engineering Physics

Shanxi Province International Science and Technology Cooperation and Exchange Project

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Reference20 articles.

1. Kaizu T, Yamaguchi K (2001) Self size-limiting process of InAs quantum dots grown by molecular beam epitaxy. Jpn J Appl Phys 40(40):1885–1887

2. Wasilewski ZR, Fafard S, Mccaffrey JP (1999) Size and shape engineering of vertically stacked self-assembled quantum dots. J Cryst Growth 201(5):1131–1135.

3. Tanabe K, Rae T, Watanabe K et al (2013) High-temperature 1.3 μm InAs/GaAs quantum dot lasers on Si substrates fabricated by wafer bonding. Appl Phys Express 6(6):2703.

4. Wang H, Kong L, Pan J, Xu T, Wei J, Haiqiao N, Bifeng C, Ying D (2013) Recent progress of semiconductor mode-locked lasers. Laser Opto Electron Prog 5:050001-1–050001-14.

5. Ledentsov NN, Grundmann M, Kirstaedter N et al (1996) Ordered arrays of quantum dots: formation, electronic spectra, relaxation phenomena, lasing. Solid State Electron 40(1–8):785–798.

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