Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices-Reference-Cited by-同舟云学术

Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices

Published:2017-10-05 Issue:1 Volume:12 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Golovynskyi Sergii,Seravalli Luca,Datsenko Oleksandr,Kozak Oleksii,Kondratenko Serhiy V.,Trevisi Giovanna,Frigeri Paola,Gombia Enos,Lavoryk Sergii R.,Golovynska Iuliia,Ohulchanskyy Tymish Y.,Qu Junle

Funder

National Basic Research Program of China

National Natural Science Foundation of China

Guangdong Natural Science Foundation Innovation Team

Hong Kong, Macao and Taiwan cooperation innovation platform & major projects of international cooperation in Colleges and Universities in Guangdong Province

Shenzhen Basic Research Project

COST Action "Nanoscale Quantum Optics" of European Union

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-017-2331-2.pdf

Reference60 articles.

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2. Chen Z-S, Ma B, Shang X-J, Ni H-Q, Wang J-L, Niu Z-C (2017) Bright single-photon source at 1.3 μm based on InAs bilayer quantum dot in micropillar. Nanoscale Res Lett 12:378

3. Maximov MV, Kryzhanovskaya NV, Nadtochiy AM, Moiseev EI, Shostak II, Bogdanov AA et al (2014) Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots. Nanoscale Res Lett 9:657