Abstract
AbstractSilicon quantum dot (Si-QD) embedded in amorphous silicon oxide is used for p-i-n solar cell on quartz substrate as a photogeneration layer. To suppress diffusion of phosphorus from an n-type layer to a Si-QD photogeneration layer, niobium-doped titanium oxide (TiOx:Nb) is adopted. Hydrofluoric acid treatment is carried out for a part of the samples to remove the thermal oxide layer in the interface of TiOx:Nb/n-type layer. The thermal oxide acts as a photo-generated carrier-blocking layer. Solar cell properties using 10-nm-thick TiOx:Nb without the thermal oxide are better than those with the thermal oxide, notably short circuit current density is improved up to 1.89 mA/cm2. The photo-generated carrier occurs in Si-QD with quantum confinement effect. The 10-nm-thick TiOx:Nb with the thermal oxide layer effectively blocks P; however, P-diffusion is not completely suppressed by the 10-nm-thick TiOx:Nb without the thermal oxide. These results indicate that the total thickness of TiOx:Nb and thermal oxide layer influence the P-blocking effect. To achieve the further improvement of Si-QD solar cell, over 10-nm-thick TiOx:Nb is needed.
Funder
Advanced Low Carbon Technology Research and Development Program
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Cited by
6 articles.
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