Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN
Author:
Funder
Ministry of Science and Technology, Taiwan
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Link
http://link.springer.com/content/pdf/10.1186/s11671-016-1727-8.pdf
Reference22 articles.
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2. Feng SW, Lai CM, Chen CH, Sun WC, Tu LW (2010) Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of p-i-n InGaN single homo-junction solar cells. J Appl Phys 108:93118
3. Feng SW, Lai CM, Tsai CY, Su YR, Tu LW (2013) Modeling of InGaN p-n junction solar cells. Opt Mater Express 3:1777
4. Feng SW, Liao PH, Leung B, Han J, Yang FW, Wang HC (2015) Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes. J Appl Phys 118:043104
5. Keller S, Li H, Laurent M, Hu Y, Pfaff N, Lu J, Brown DF, Fichtenbaum NA, Speck JS, Denbaars SP (2014) Recent progress in petal-organic chemical vapor deposition of N-polar group-III nitrides. Semicond Sci Technol 29:113001
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