Evaluation of Potential Distribution in Channel Region of Amorphous InGaZnO Thin Film Transistor by Bias Applied Hard X-ray Photoelectron Spectroscopy
Author:
Affiliation:
1. Japan Synchrotron Radiation Research Institute (JASRI)
2. SPring-8 Service Co., Ltd.
Publisher
Surface Analysis Society of Japan
Link
https://www.jstage.jst.go.jp/article/jsa/24/2/24_136/_pdf
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