Interdiffusion at Ge/Si Interfaces Studied with AES Depth Profiling
Author:
Affiliation:
1. Institute of Semiconductor Physics SB AS Russia
2. Max-Planck-Institute for Metals Research
Publisher
Surface Analysis Society of Japan
Link
http://www.jstage.jst.go.jp/article/jsa/9/3/9_3_428/_pdf
Reference7 articles.
1. Ultimate depth resolution and profile reconstruction in sputter profiling with AES and SIMS
2. [3] S .Hofmann and V. Kesler, Quantitative AES Depth Profiling of Ge/Si Multilayer Structure, SIA (2002), in press.
3. Normal-incidence infrared photoconductivity in Si p-i-n diode with embedded Ge self-assembled quantum dots
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