Dynamic character of compositional sputter depth profiling by SIMS: A comparison of different models for quantitative profile evaluation

Author:

Hofmann Siegfried12,Zhong Feng-Min1ORCID,Yang Hao1,Wang Jiang-Yong13ORCID,Xu Cong-Kang13ORCID

Affiliation:

1. Department of Physics, Shantou University 1 , 243 Daxue Road, Shantou 515063, Guangdong, China

2. Max Planck Institute for Intelligent Systems (Formerly MPI for Metals Research) 2 , Heisenbergstrasse 3, D-70569 Stuttgart, Germany

3. Center of Semiconductor Materials and Devices, Shantou University 3 , 243 Daxue Road, Shantou 515063, Guangdong, China

Abstract

We are dealing with some new insights in the quantification of sputter depth profiles obtained by secondary ion mass spectroscopy, which can be easily extended to XPS or AES. Recent publications present a rather negative image of the mixing-roughness-information depth (MRI) model of quantitative sputter depth profile evaluation in conjunction with Dowsett’s up-and-down slope (UDS) model, at first we attempt to point out the merits of the MRI model. Since these publications come up with a new, alternative model [called roughness-mixing-recoil model (RMR)], we discuss in detail the flaws of both the UDS and the RMR models. In conclusion, we present some instructive examples that show the decisive validity of the MRI model in describing the nature of the process of sputter depth profiling.

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

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