Influence of Ion Beam Position Shift on the Depth Profiling in AES-Reference-Cited by-同舟云学术

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Influence of Ion Beam Position Shift on the Depth Profiling in AES

Published:2002 Issue:3 Volume:9 Page:353-355
ISSN:1341-1756
Container-title:Journal of Surface Analysis
language:en
Short-container-title:JSA

Author:

Xu Junhua¹,Fukumoto Natsuo¹,Azuma Yasushi¹,Kojima Isao¹

Affiliation:

1. Materials Characterization Division, National Metrology Institute of Japan (NMIJ), National Institute of Advanced Industrial Science and Technology (AIST)

Publisher

Surface Analysis Society of Japan

Link

http://www.jstage.jst.go.jp/article/jsa/9/3/9_3_353/_pdf

Reference10 articles.

1. AES Depth Profiling of Semiconducting Epitaxial Layers with Thicknesses in the Nanometre Range Using an Ion Beam Bevelling Technique

2. Sputtering-induced surface roughness of polycrystalline Al films and its influence on AES depth profiles

3. Ultimate depth resolution and profile reconstruction in sputter profiling with AES and SIMS

4. Effects of surface structure on depth resolution of AES depth profiles of Ni/Cr multilayers

5. Original and sputtering induced interface roughness in AES sputter depth profiling of SiO 2 /Ta 2 O 5 multilayers

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Round Robin Test for Depth Profiling of SiO2/Si Multilayer.;Analytical Sciences;2002

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