Thickness and tensile stress determination of black silicon layers by spectral reflectance and Raman scattering-Reference-Cited by-同舟云学术

Thickness and tensile stress determination of black silicon layers by spectral reflectance and Raman scattering

Published:2019-09-28 Issue:7 Volume:70 Page:51-57
ISSN:1339-309X
Container-title:Journal of Electrical Engineering
language:en
Short-container-title:

Author:

Králik Martin¹,Jurečka Stanislav¹,Pinčík Emil²

Affiliation:

1. Institute of Aurel Stodola, Faculty of Electrical Engineering , University of Žilina , ul. kpt. J. Nálepku 1390, 03101 Liptovský Mikuláš , Slovakia

2. Institute of Physics , Slovak Academy of Sciences , Dúbravská cesta 9, 845 11 Bratislava , Slovakia

Abstract

Abstract In this work black silicon (b-Si) samples were prepared by anodic (electrochemical) etching of p-type silicon substrate in solution of hydrofluoric acid (HF). We studied influence of anodic etching conditions (etching time, electrical potential and current) on the spectral reflectance and Raman scattering spectra. Optical properties of b-Si structures were experimentally studied by UV-VIS (AvaSpec-2048) and Raman (Thermo DXR Raman) spectrometers. B-Si layer thickness of formed substrate were determined by using SCOUT software. Effective medium approximation theory (Looyenga) was used in construction of the reflectance model. Influence of the deformation of crystal lattice introduced during the substrate etching was studied by Raman scattering method. Teoretical model of the 1st order Raman scattering profile was constructed by using pseudo-Voigt function and the profile parameters were extracted. The values of biaxial tensile stress were estimated by using optimized Raman profile parameters.

Publisher

Walter de Gruyter GmbH

Link

https://www.sciendo.com/pdf/10.2478/jee-2019-0041

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