Influence of Bi on dielectric properties of GaAs1−xBix alloys-Reference-Cited by-同舟云学术

Influence of Bi on dielectric properties of GaAs1−xBix alloys

Published:2019-06-01 Issue:2 Volume:37 Page:244-248
ISSN:2083-134X
Container-title:Materials Science-Poland
language:en
Short-container-title:

Author:

Ulutas K.¹,Yakut S.¹,Bozoglu D.¹,Deger D.¹,Arslan M.²,Erol A.¹

Affiliation:

1. Istanbul University , Science Faculty, Physics Department , Vezneciler, 34459 , Istanbul , Turkey

2. Sakarya University , Faculty of Arts and Sciences , 54187 , Sakarya , Turkey

Abstract

Abstract Pure GaAs and GaAs1−xBix alloys with different Bi ratios (1 %, 2.5 %, 3.5 %) fitted with silver contacts were measured with a dielectric spectroscopy device. Dielectric characterization was performed at room temperature in the frequency range of 0.1 Hz to 1 MHz. GaAs exhibits three relaxation regions corresponding to space-charge, dipolar and ionic polarizations in sequence with increasing frequency while GaAs1−xBix samples show only a broad dipolar polarization in the same frequency range. This result proves the filling of the lattice with Bi through making a new bonding reducing the influence of ionic polarization. This finding supports the previous results concerning optical properties of GaAs1−xBix, presented in the literature.

Publisher

Walter de Gruyter GmbH

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.sciendo.com/pdf/10.2478/msp-2019-0025

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