Author:
Andok Robert,Benčurová Anna,Nemec Pavol,Konečníková Anna,Matay Ladislav,Škriniarová Jaroslava,Hrkút Pavol
Abstract
Abstract
In this article we describe the electron-beam direct-write (EBDW) lithography process for the AZ 5214E photoresist which is, besides its sensitivity to UV radiation, sensitive also to electrons. An adapted process flow is provided. At the same time we examine the resistance of this resist to RIE and its suitability as an etch-mask for etching thin Ag layers in N2 plasma. A comparison with several chosen resists (PMMA, ma-2405, ma-N 1402, SU-8 2000) is provided.
Subject
Electrical and Electronic Engineering
Cited by
3 articles.
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