Abstract
AbstractMinority recombination lifetimes of n-type CdMgSe mixed crystals were estimated by using infrared photothermal radiometry (PTR) amplitude and phase frequency spectra. The results obtained by the PTR method indicate that the lifetimes of optically generated carriers in CdSe and CdxMg1−xSe crystals are about 0.1 μs. The diffusion length of minority carrier in n-type CdSe single crystal was found to be 4.42 μm and it is in a good agreement with the literature value. It was found that with the increasing thermal-to-plasma component coefficient A the carrier concentration increases as expected from PTR theory.
Subject
Electrical and Electronic Engineering,Radiation,General Materials Science
Reference21 articles.
1. Growth and optical char acterization of CdBeSe and CdMgSe crystals;Firszt;Res Technol,2005
2. Characterisa tion of CdMgSe solid solutions by spectroscopic ellipso metry;Wronkowska;Vacuum,2001
3. Hole and electron drift velocity in CdSe at room temperature Solid State;Canali;Commun,1972
4. Gib kes Thermal transport properties of CdMgSe mixed crystals measured by means of the photopyroelectric method;Pawlak;J Thermophys,2010
5. Noncontact measure ment of transport properties of long bulk carrier lifetime Si wafers using photothermal radiometry;Salnick;Appl Phys Lett,1996
Cited by
14 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献