Influence of light intensity on the lifetime of carriers in silicon investigated by a photoacoustic method-Reference-Cited by-同舟云学术

Influence of light intensity on the lifetime of carriers in silicon investigated by a photoacoustic method

Published:2016-01-01 Issue:2 Volume:24 Page:
ISSN:1230-3402
Container-title:Opto-Electronics Review
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Author:

Bychto L.,Maliński M.

Abstract

AbstractThe paper presents experimental results of the lifetime of light induced excess carriers in the n−type silicon. The lifetimes of carriers of silicon crystals were analysed as a function of the intensity of light illuminating the sample. As a measurement method of the lifetime of carriers, the photoacoustic method in a transmission configuration with different surfaces was used. The dependence character was next analysed in the frame of the Shockley Reed Hall statistics in approximation of the light low intensity.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Radiation,General Materials Science

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